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1. product pro?le 1.1 general description unidirectional double electrostatic discharge (esd) protection diodes in a common cathode con?guration, encapsulated in a sot23 (to-236ab) small surface-mounted device (smd) plastic package. the devices are designed for esd and transient overvoltage protection of up to two signal lines. [1] all types available as /dg halogen-free version. 1.2 features 1.3 applications mmbzxvcl; mmbzxvdl series double esd protection diodes for transient overvoltage suppression rev. 01 3 september 2008 product data sheet table 1. product overview type number [1] package con?guration nxp jedec mmbz12vdl sot23 to-236ab dual common cathode mmbz15vdl mmbz18vcl mmbz20vcl MMBZ27VCL mmbz33vcl n unidirectional esd protection of two lines n esd protection up to 30 kv (contact discharge) n bidirectional esd protection of one line n iec 61000-4-2; level 4 (esd) n low diode capacitance: c d 140 pf n iec 61643-321 n rated peak pulse power: p ppm 40 w n aec-q101 quali?ed n ultra low leakage current: i rm 5na n computers and peripherals n automotive electronic control units n audio and video equipment n portable electronics n cellular handsets and accessories free datasheet http:///
mmbzxvcl_mmbzxvdl_ser_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 3 september 2008 2 of 15 nxp semiconductors mmbzxvcl; mmbzxvdl series double esd protection diodes for transient overvoltage suppression 1.4 quick reference data 2. pinning information table 2. quick reference data t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit per diode v rwm reverse standoff voltage mmbz12vdl mmbz12vdl/dg - - 8.5 v mmbz15vdl mmbz15vdl/dg - - 12.8 v mmbz18vcl mmbz18vcl/dg - - 14.5 v mmbz20vcl mmbz20vcl/dg --17v MMBZ27VCL MMBZ27VCL/dg --22v mmbz33vcl mmbz33vcl/dg --26v c d diode capacitance f = 1 mhz; v r =0v mmbz12vdl mmbz12vdl/dg - 110 140 pf mmbz15vdl mmbz15vdl/dg - 85 105 pf mmbz18vcl mmbz18vcl/dg - 7090pf mmbz20vcl mmbz20vcl/dg - 6580pf MMBZ27VCL MMBZ27VCL/dg - 4860pf mmbz33vcl mmbz33vcl/dg - 4555pf table 3. pinning pin description simpli?ed outline graphic symbol 1 anode (diode 1) 2 anode (diode 2) 3 common cathode 12 3 006aaa150 12 3 free datasheet http:///
mmbzxvcl_mmbzxvdl_ser_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 3 september 2008 3 of 15 nxp semiconductors mmbzxvcl; mmbzxvdl series double esd protection diodes for transient overvoltage suppression 3. ordering information 4. marking [1] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china table 4. ordering information type number package name description version mmbz12vdl - plastic surface-mounted package; 3 leads sot23 mmbz15vdl mmbz18vcl mmbz20vcl MMBZ27VCL mmbz33vcl mmbz12vdl/dg - plastic surface-mounted package; 3 leads sot23 mmbz15vdl/dg mmbz18vcl/dg mmbz20vcl/dg MMBZ27VCL/dg mmbz33vcl/dg table 5. marking codes type number marking code [1] type number marking code [1] mmbz12vdl *ma mmbz12vdl/dg tj* mmbz15vdl *mb mmbz15vdl/dg tl* mmbz18vcl *mc mmbz18vcl/dg tn* mmbz20vcl *md mmbz20vcl/dg tq* MMBZ27VCL *me MMBZ27VCL/dg ts* mmbz33vcl *mf mmbz33vcl/dg tu* free datasheet http:///
mmbzxvcl_mmbzxvdl_ser_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 3 september 2008 4 of 15 nxp semiconductors mmbzxvcl; mmbzxvdl series double esd protection diodes for transient overvoltage suppression 5. limiting values [1] in accordance with iec 61643-321 (10/1000 m s current waveform). [2] measured from pin 1 or 2 to pin 3. [3] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. [4] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2 . [1] device stressed with ten non-repetitive esd pulses. [2] measured from pin 1 or 2 to pin 3. table 6. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per diode p ppm rated peak pulse power t p = 10/1000 m s [1] [2] -40w i ppm rated peak pulse current t p = 10/1000 m s [1] [2] mmbz12vdl mmbz12vdl/dg - 2.35 a mmbz15vdl mmbz15vdl/dg - 1.9 a mmbz18vcl mmbz18vcl/dg - 1.6 a mmbz20vcl mmbz20vcl/dg - 1.4 a MMBZ27VCL MMBZ27VCL/dg -1a mmbz33vcl mmbz33vcl/dg - 0.87 a per device p tot total power dissipation t amb 25 c [3] - 350 mw [4] - 440 mw t j junction temperature - 150 c t amb ambient temperature - 55 +150 c t stg storage temperature - 65 +150 c table 7. esd maximum ratings t amb =25 c unless otherwise speci?ed. symbol parameter conditions min max unit per diode v esd electrostatic discharge voltage [1] [2] iec 61000-4-2 (contact discharge) -30kv machine model - 2 kv free datasheet http:///
mmbzxvcl_mmbzxvdl_ser_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 3 september 2008 5 of 15 nxp semiconductors mmbzxvcl; mmbzxvdl series double esd protection diodes for transient overvoltage suppression 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2 . [3] soldering point at pin 3. table 8. esd standards compliance standard conditions per diode iec 61000-4-2; level 4 (esd) > 15 kv (air); > 8 kv (contact) mil-std-883; class 3 (human body model) > 8 kv fig 1. 10/1000 m s pulse waveform according to iec 61643-321 fig 2. esd pulse waveform according to iec 61000-4-2 t p (ms) 0 4.0 3.0 1.0 2.0 006aab319 50 100 150 i pp (%) 0 50 % i pp ; 1000 m s 100 % i pp ; 10 m s 001aaa631 i pp 100 % 90 % t 30 ns 60 ns 10 % t r = 0.7 ns to 1 ns table 9. thermal characteristics symbol parameter conditions min typ max unit per device r th(j-a) thermal resistance from junction to ambient in free air [1] - - 350 k/w [2] - - 280 k/w r th(j-sp) thermal resistance from junction to solder point [3] --60k/w free datasheet http:///
mmbzxvcl_mmbzxvdl_ser_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 3 september 2008 6 of 15 nxp semiconductors mmbzxvcl; mmbzxvdl series double esd protection diodes for transient overvoltage suppression 7. characteristics table 10. characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit per diode v f forward voltage mmbz12vdl mmbz12vdl/dg i f = 10 ma - - 0.9 v mmbz15vdl mmbz15vdl/dg i f = 10 ma - - 0.9 v mmbz18vcl mmbz18vcl/dg i f = 10 ma - - 0.9 v mmbz20vcl mmbz20vcl/dg i f = 10 ma - - 0.9 v MMBZ27VCL MMBZ27VCL/dg i f = 200 ma - - 1.1 v mmbz33vcl mmbz33vcl/dg i f = 10 ma - - 0.9 v v rwm reverse standoff voltage mmbz12vdl mmbz12vdl/dg - - 8.5 v mmbz15vdl mmbz15vdl/dg - - 12.8 v mmbz18vcl mmbz18vcl/dg - - 14.5 v mmbz20vcl mmbz20vcl/dg --17v MMBZ27VCL MMBZ27VCL/dg --22v mmbz33vcl mmbz33vcl/dg --26v i rm reverse leakage current mmbz12vdl mmbz12vdl/dg v rwm = 8.5 v - 0.1 5 na mmbz15vdl mmbz15vdl/dg v rwm = 12.8 v - 0.1 5 na mmbz18vcl mmbz18vcl/dg v rwm = 14.5 v - 0.1 5 na mmbz20vcl mmbz20vcl/dg v rwm =17v - 0.1 5 na MMBZ27VCL MMBZ27VCL/dg v rwm =22v - 0.1 5 na mmbz33vcl mmbz33vcl/dg v rwm =26v - 0.1 5 na free datasheet http:///
mmbzxvcl_mmbzxvdl_ser_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 3 september 2008 7 of 15 nxp semiconductors mmbzxvcl; mmbzxvdl series double esd protection diodes for transient overvoltage suppression v br breakdown voltage i r =1ma mmbz12vdl mmbz12vdl/dg 11.4 12 12.6 v mmbz15vdl mmbz15vdl/dg 14.3 15 15.8 v mmbz18vcl mmbz18vcl/dg 17.1 18 18.9 v mmbz20vcl mmbz20vcl/dg 19 20 21 v MMBZ27VCL MMBZ27VCL/dg 25.65 27 28.35 v mmbz33vcl mmbz33vcl/dg 31.35 33 34.65 v c d diode capacitance f = 1 mhz; v r =0v mmbz12vdl mmbz12vdl/dg - 110 140 pf mmbz15vdl mmbz15vdl/dg - 85 105 pf mmbz18vcl mmbz18vcl/dg - 7090pf mmbz20vcl mmbz20vcl/dg - 6580pf MMBZ27VCL MMBZ27VCL/dg - 4860pf mmbz33vcl mmbz33vcl/dg - 4555pf v cl clamping voltage [1] [2] mmbz12vdl mmbz12vdl/dg i ppm = 2.35 a - - 17 v mmbz15vdl mmbz15vdl/dg i ppm = 1.9 a - - 21.2 v mmbz18vcl mmbz18vcl/dg i ppm = 1.6 a - - 25 v mmbz20vcl mmbz20vcl/dg i ppm = 1.4 a - - 28 v MMBZ27VCL MMBZ27VCL/dg i ppm =1a --38v mmbz33vcl mmbz33vcl/dg i ppm = 0.87 a - - 46 v table 10. characteristics continued t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit free datasheet http:///
mmbzxvcl_mmbzxvdl_ser_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 3 september 2008 8 of 15 nxp semiconductors mmbzxvcl; mmbzxvdl series double esd protection diodes for transient overvoltage suppression [1] in accordance with iec 61643-321 (10/1000 m s current waveform). [2] measured from pin 1 or 2 to pin 3. s z temperature coef?cient i z =1ma mmbz12vdl mmbz12vdl/dg - 8.1 - mv/k mmbz15vdl mmbz15vdl/dg - 11 - mv/k mmbz18vcl mmbz18vcl/dg - 14 - mv/k mmbz20vcl mmbz20vcl/dg - 15.8 - mv/k MMBZ27VCL MMBZ27VCL/dg - 23 - mv/k mmbz33vcl mmbz33vcl/dg - 29.4 - mv/k table 10. characteristics continued t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit MMBZ27VCL: unidirectional and bidirectional t amb =25 c fig 3. rated peak pulse power as a function of exponential pulse duration (rectangular waveform); typical values fig 4. relative variation of rated peak pulse power as a function of junction temperature; typical values 006aab327 10 2 10 10 3 p ppm (w) 1 t p (ms) 10 - 2 10 3 10 2 10 - 1 10 1 t j ( c) 0 200 150 50 100 006aab321 0.4 0.8 1.2 p ppm 0 p ppm(25 c) free datasheet http:///
mmbzxvcl_mmbzxvdl_ser_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 3 september 2008 9 of 15 nxp semiconductors mmbzxvcl; mmbzxvdl series double esd protection diodes for transient overvoltage suppression f = 1 mhz; t amb =25 c (1) mmbz15vdl: unidirectional (2) mmbz15vdl: bidirectional (3) MMBZ27VCL: unidirectional (4) MMBZ27VCL: bidirectional MMBZ27VCL: v rwm =22v fig 5. diode capacitance as a function of reverse voltage; typical values fig 6. reverse leakage current as a function of junction temperature; typical values fig 7. v-i characteristics for a unidirectional esd protection diode fig 8. v-i characteristics for a bidirectional esd protection diode v r (v) 025 20 10 15 5 006aab328 40 60 20 80 100 c d (pf) 0 (1) (2) (3) (4) 006aab329 10 - 1 10 - 2 10 1 10 2 i rm (na) 10 - 3 t amb ( c) - 75 175 125 25 75 - 25 006aab324 - v cl - v br - v rwm - i rm - i r - i pp v i p-n - + - i ppm 006aab325 - v cl - v br - v rwm v cl v br v rwm - i rm i rm - i r i r - i pp i pp - + i ppm - i ppm free datasheet http:///
mmbzxvcl_mmbzxvdl_ser_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 3 september 2008 10 of 15 nxp semiconductors mmbzxvcl; mmbzxvdl series double esd protection diodes for transient overvoltage suppression 8. application information the mmbzxvcl series and the mmbzxvdl series are designed for the protection of up to two unidirectional data or signal lines from the damage caused by esd and surge pulses. the devices may be used on lines where the signal polarities are either positive or negative with respect to ground. the devices provide a surge capability of 40 w per line for a 10/1000 m s waveform. circuit board layout and protection device placement circuit board layout is critical for the suppression of esd, electrical fast transient (eft) and surge transients. the following guidelines are recommended: 1. place the devices as close to the input terminal or connector as possible. 2. the path length between the device and the protected line should be minimized. 3. keep parallel signal paths to a minimum. 4. avoid running protected conductors in parallel with unprotected conductors. 5. minimize all printed-circuit board (pcb) conductive loops including power and ground loops. 6. minimize the length of the transient return path to ground. 7. avoid using shared transient return paths to a common ground point. 8. ground planes should be used whenever possible. for multilayer pcbs, use ground vias. 9. test information 9.1 quality information this product has been quali?ed in accordance with the automotive electronics council (aec) standard q101 - stress test quali?cation for discrete semiconductors , and is suitable for use in automotive applications. fig 9. typical application: esd and transient voltage protection of data lines 006aab330 mmbzxvcl/vdl line 1 to be protected unidirectional protection of two lines bidirectional protection of one line line 2 to be protected gnd mmbzxvcl/vdl line 1 to be protected gnd free datasheet http:///
mmbzxvcl_mmbzxvdl_ser_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 3 september 2008 11 of 15 nxp semiconductors mmbzxvcl; mmbzxvdl series double esd protection diodes for transient overvoltage suppression 10. package outline 11. packing information [1] for further information and the availability of packing methods, see section 15 . fig 10. package outline sot23 (to-236ab) 04-11-04 dimensions in mm 0.45 0.15 1.9 1.1 0.9 3.0 2.8 2.5 2.1 1.4 1.2 0.48 0.38 0.15 0.09 12 3 table 11. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 10000 mmbz12vdl sot23 4 mm pitch, 8 mm tape and reel -215 -235 mmbz15vdl mmbz18vcl mmbz20vcl MMBZ27VCL mmbz33vcl mmbz12vdl/dg sot23 4 mm pitch, 8 mm tape and reel -215 -235 mmbz15vdl/dg mmbz18vcl/dg mmbz20vcl/dg MMBZ27VCL/dg mmbz33vcl/dg free datasheet http:///
mmbzxvcl_mmbzxvdl_ser_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 3 september 2008 12 of 15 nxp semiconductors mmbzxvcl; mmbzxvdl series double esd protection diodes for transient overvoltage suppression 12. soldering fig 11. re?ow soldering footprint sot23 (to-236ab) fig 12. wave soldering footprint sot23 (to-236ab) solder lands solder resist occupied area solder paste sot023_fr 0.5 (3 ) 0.6 (3 ) 0.6 (3 ) 0.7 (3 ) 3 1 3.3 2.9 1.7 1.9 2 dimensions in mm solder lands solder resist occupied area preferred transport direction during soldering sot023_fw 2.8 4.5 1.4 4.6 1.4 (2 ) 1.2 (2 ) 2.2 2.6 dimensions in mm free datasheet http:///
mmbzxvcl_mmbzxvdl_ser_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 3 september 2008 13 of 15 nxp semiconductors mmbzxvcl; mmbzxvdl series double esd protection diodes for transient overvoltage suppression 13. revision history table 12. revision history document id release date data sheet status change notice supersedes mmbzxvcl_mmbzxvdl_ser_1 20080903 product data sheet - - free datasheet http:///
mmbzxvcl_mmbzxvdl_ser_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 3 september 2008 14 of 15 nxp semiconductors mmbzxvcl; mmbzxvdl series double esd protection diodes for transient overvoltage suppression 14. legal information 14.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 14.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 14.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. esd protection devices these products are only intended for protection against electrostatic discharge (esd) pulses and are not intended for any other usage including, without limitation, voltage regulation applications. nxp semiconductors accepts no liability for use in such applications and therefore such use is at the customers own risk. 14.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 15. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation. free datasheet http:///
nxp semiconductors mmbzxvcl; mmbzxvdl series double esd protection diodes for transient overvoltage suppression ? nxp b.v. 2008. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 3 september 2008 document identifier: mmbzxvcl_mmbzxvdl_ser_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 16. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 5 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 application information. . . . . . . . . . . . . . . . . . 10 9 test information . . . . . . . . . . . . . . . . . . . . . . . . 10 9.1 quality information . . . . . . . . . . . . . . . . . . . . . 10 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 11 packing information. . . . . . . . . . . . . . . . . . . . . 11 12 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 14 legal information. . . . . . . . . . . . . . . . . . . . . . . 14 14.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 14.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 15 contact information. . . . . . . . . . . . . . . . . . . . . 14 16 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 free datasheet http:///

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